c1 2006 PDF Print E-mail
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Wednesday, 30 May 2012 11:52

C1 2006

  1. New generation of catalytic PVDF membranes: coupling plasma treatments with chemical immobilization of W-based catalysts; Lopez, L.C., Fontananova, E., Buonomenna, M.G., Iacoviello, G., Drioli, E., d’Agostino, R, Favia, P;ADVANCED FUNCTIONAL MATERIALS ;2006; 16;1417
  2. Temperature dependence of the optical properties of ZnSe films deposited on quartz substrate; G. Perna, M. Lastella, M. Ambrico, V. Capozzi; APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING ; 2006; 87;127
  3. Impact of 4H and 6H SiC 0001 nitridation on Ga wetting layer development and GaN growth by molecular beam epitaxy; T-H Kim, S. Choi, A. S. Brown M. Losurdo and G. Bruno; APPLIED PHYSICS LETTERS ;2006; 89 ;021916
  4. Study of the dielectric function of hexagonal InN: Impact of indium clusters and of native oxide; M. Losurdo, M. G. Bruno, T.H. Kim, S. Choi, A.S. Brown; APPLIED PHYSICS LETTERS ; 2006; 88;121928
  5. Surface oxide relationship to band bending in GaN; M. A. Garcia, S. D. Wolter, T. H. Kim, S. Choi, J. Bajer, April Brown, M. Losurdo and G. Bruno;APPLIED PHYSICS LETTERS 2006 ; 88; 013506
  6. The kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces; S. Choi, T.H.Kim, H.O. Everitt, A. Brown, M.Losurdo, G. Bruno, A. Moto; APPLIED PHYSICS LETTERS ;2006; 89 ;181915
  7. An optical study of the correlation between growth kinetics and microstructure of mc-Si grown by SiH4-H2 PECVD; M.M. Giangregorio, M. Losurdo, A. Sacchetti, P. Capezzuto, F. Giorgis, G. Bruno; APPLIED SURFACE SCIENCE ; 2006 ;253;287
  8. Probing electrical properties of molecule-controlled or plasma-nitrided GaAs surfaces: Two different tools for modifying the electrical characteristics of metal/GaAs diodes; M. Ambrico, M. Losurdo, P. Capezzuto, G. Bruno, T. Ligonzo, H. Haick; APPLIED SURFACE SCIENCE ;2006; 252;736
  9. Real time ellipsometry for monitoring plasma-assisted epitaxial growth of GaN; G. Bruno, M. Losurdo , M. M. Giangregorio, P. Capezzuto, A. S. Brown, Tong-Ho Kim, Soojeong Choi; APPLIED SURFACE SCIENCE ; 2006; 253; 219
  10. Structural and optical characterization of GaN heteroepitaxial films on SiC substrates; M. Morse, P. Wu, S. Choi, T.H. Kim, A.S. Brown, M. Losurdo, G. Bruno; APPLIED SURFACE SCIENCE ; 2006; 253; 232
  11. Structural optical study of high-dielectric-constant oxide films; M. Losurdo, M.M. Giangregorio, M. Luchena, P. Capezzuto, G. Bruno, R.G. Toro, G. Malandrino, I.L. Fragala`, R. Lo Nigro; APPLIED SURFACE SCIENCE ; 2006; 253; 322
  12. Heterogenization of Polyoxometalates on the Surface of Plasma-Modified Polymeric Membranes; E. Fontananova, L. Donato, E. Drioli, L. C. Lopez, P. Favia, R. d Agostino;CHEMISTRY OF MATERIALS ;2006; 18 ;1561
  13. Low temperature plasma processes for biomedical applications and membrane processing; P. Favia. Lopez LC, Sardella E, Gristina R, Nardulli M, d Agostino R ; DESALINATION ;2006; 199 ;268
  14. Plasma modifications of porous PEEK–WC–PU membranes; LC Lopez, P. Favia, R. d’Agostino; DESALINATION ; 2006 ; 200;503
  15. Sodium tungstate immobilised on plasma treated membranes: preparation, characterization and use in flat membrane reactors; Buonomenna MG, Lopez LC, Barbieri P, Favia P, d Agostino R, Drioli E; DESALINATION ; 2006; 200 ;697
  16. Dielectric function and electric properties of germanium thin films prepared by gold mediated crystallization ; M.M. Giangregorio, M. Losurdo, M. Ambrico, P. Capezzuto, and G. Bruno, L.Tapfer; JOURNAL OF APPLIED PHYSICS ; 2006 ; 99 ;1
  17. Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry and kinetics of P-for-As exchange reaction; A.S. Brown, M. Losurdo, G. Bruno, T. Brown, G. May; JOURNAL OF APPLIED PHYSICS ;2006 ; 99; 093510
  18. Fundamental reactions controlling anion exchange during mixed anion heterojunction formation: Chemistry of As-for-Sb and Sb-for-As exchange reactions; M. Losurdo, P. Capezzuto, G. Bruno, A.S. Brown, T. Brown, G. Mayÿ;JOURNAL OF APPLIED PHYSICS ; 2006 ; 100 ;013531
  19. Plasma processing of the Si(0 0 1) surface for tuning SPR of Au/Si-based plasmonic nanostructures; M. M. Giangregorio_, M. Losurdo, A. Sacchetti, P. Capezzuto, G. Bruno;JOURNAL OF LUMINESCENCE ; 2006; 121 ;322
  20. Outstanding Meeting Paper: Plasma-Assisted MOCVD growth of ZnO Thin Films; M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno, G. Malandrino, L. Fraga ; JOURNAL OF MATERIALS RESEARCH ;2006 ; 21; 1632
  21. Amorphous siliocn nitride: a suitable alloy for optical multilayer structures; C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L.C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, F. Giorgis; JOURNAL OF NON-CRYSTALLINE SOLIDS ; 2006 ; 352 ; 1294
  22. Dynamics of low temperature PECVD growth of microcristalline silicon thin films: impact of substrate surface treatments; M. Losurdo, M.M. Giangregorio, A. Sacchetti, P. Capezzuto, G. Bruno, J. Carabe, J.J. Gandia, L. Urbina; JOURNAL OF NON-CRYSTALLINE SOLIDS ; 2006; 352 ;906
  23. Study of the oxygen role in the photoluminescence of erbium doped nanocrystalline siliocn embedded in a silicon amorphous matrix; M.F. Cerqueira, M. Losurdo, T. Monteiro, M. Stepikhova, M.J. Soares, M. Peres, E. Alves, O. Conde; JOURNAL OF NON-CRYSTALLINE SOLIDS ;2006; 352; 1148
  24. Calcium Copper-Titanate Thin Film Growth: Tailoring of the Operational Conditions through Nanocharacterization and Substrate Nature Effects; R. Lo Nigro, R. G. Toro, G. Malandrino, I. L. Fragala`, M. Losurdo, M. M. Giangregorio, G.Bruno, V. Raineri, and P. Fiorenza;-JOURNAL OF PHYSICAL CHEMISTRY B ;-2006; 110 ;17460
  25. Controlling Semiconductor/Metal Junction Barriers by Incomplete, Nonideal Molecular Monolayers; H. Haick, M. Ambrico, T. Ligonzo, R. T. Tung and D. Cahen; JOURNAL OF THE AMERICAN CHEMICAL SOCIETY ; 2006; 128; 6854
  26. From low-k to ultralow-k thin-film deposition by organosilicon glow discharges; A.Milella, J.L. Delattre, F. Palumbo, F. Fracassi, R. d Agostino; JOURNAL OF THE ELECTROCHEMICAL SOCIETY 2006; 153 ;F106
  27. Outstanding Meeting Paper: Plasma-Assisted MOCVD growth of ZnO Thin Films; M. Losurdo, M.M. Giangregorio, P. Capezzuto, G. Bruno, G. Malandrino, L. Fragalà; JOURNAL OF MATERIALS RESEARCH ; 2006; 21; 1632
  28. III-Nitride growth and characteristics on ferroelectric materials using plasma-assisted MBE; K.K. Lee, G. Namkoong, E.A. Doolittle, M. Losurdo, G. Bruno, D.H. Jundt; JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B ; 2006; 24; 2093
  29. Modification of InN Properties by Interactions with Hydrogen and Nitrogen; M. Losurdo, M. M. Giangregorio, G. Bruno, T.H. Kim, P. Wu, S. Choi, M. Morse, A.S. Brown; MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS ; 2006; 892; 3
  30. Plasma-Assisted MOCVD Growth of ZnO Thin Films; M.Losurdo, M. M. Giangregorio, P. Capezzuto, G. Bruno G. Malandrino, M. Blandino, I.L. Fragal; MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS 2006; 892; 6
  31. Effect of the matrix on the 1.5 mm photoluminescence of Er-doped silicon quantum dots; M. F. Cerqueira, M. Stepikhova, M. Losurdo, T. Monteiro, M.J. Soares, M. Peres, A. Neves, E. Alves; MATERIALS SCIENCE FORUM ; 2006; 514/6; 1116
  32. Erbium-doped silicon nanocrystals grown by r.f. sputtering method: Competition between oxygen and silicon to get erbium; M.F. Cerqueira, M. Stepikhova , M. Losurdo, M.M. Giangregorio, A. Kozanecki, T. Monteiro OPTICAL MATERIALS; 2006 ; 28; 836
  33. Buffer Free MOCVD Growth of GaN on 4H-SiC: Effect of Substrate Treatments and UV-Photoirradiation; M. Losurdo, M.M. Giangregorio, G. Bruno T-H Kim, S. Choi1, P. Wu, A. Brown; PHYSICA STATUS SOLIDI A-APPLIED RESEARCH; 2006; 203; 1607
  34. Controlling Au/n-GaAs junctions by partial molecular monolayers; Haick H, Pelz JP, Ligonzo T, Ambrico M, Cahen D, Coi W, Margineau C, Tivarus C, Tung RT; PHYSICA STATUS SOLIDI A-APPLIED RESEARCH ; 2006; 203; 3438
  35. Plasma-aided micro- and nanopatterning processes for biomedical applications; Sardella E., Favia P., Gristina R.,Nardulli M., d’Agostino R.; PLASMA PROCESSES AND POLYMERS; 2006; 3; 456
  36. Tuning the acid/base surface character of carbonaceous materials by means of cold plasma treatments; P.Favia, N. De Vietro, R. Di Mundo, F. Fracassi, R. d Agostino; PLASMA PROCESSES AND POLYMERS ; 2006; 3 ;66
  37. PECVD coatings: analysis of the interface with the metallic substrate; E.Angelini, S.Grassini, F. Rosalbino, F.Fracassi, S.Laera, F.Palumbo; SURFACE AND INTERFACE ANALYSIS ; 2006; 38; 248
  38. Correlation between structure and optical properties of Si-based alloys deposited by PECVD;M.M. Giangregorio, M. Losurdo, A. Sacchetti, P. Capezzuto, G. Bruno; THIN SOLID FILMS ;2006; 511/2 ;598
  39. Microcrystalline silicon thin films grown at high deposition rate by PECVD; G. Ambrosone, U. Coscia, S. Lettieri, P. Maddalena, M. Ambrico, G. Perna, C. Minarini; THIN SOLID FILMS ; 2006; 511/2; 280
  40. Optical and photoelectronic properties of melanin;V. Capozzi, G. Perna, P. Carmone, A. Gallone, M. Lastella, E. Mezzenga, G. Quartucci, M. Ambrico, V. Augelli, P.F. Biagi, T. Ligonzo, A. Minafra, L. Schiavulli, M. Pallara, R. Cicero; THIN SOLID FILMS ;2006 ; 511/2; 362
Last Updated on Wednesday, 30 May 2012 11:59